Fabrication and electrical characterization of polyaniline/silicon carbide heterojunctions

Journal of Physics D: Applied Physics

Volumn 44, Issue 20, 2011, Pages

  Felix, J F ^a   De Vasconcelos, E A ^a   Da Silva, E F ^a   De Azevedo, W M ^a  

^a FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; AVERAGE VALUES; CONDUCTANCE MEASUREMENT; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; FORWARD BIAS; FUNCTION OF FREQUENCY; INTERFACE TRAP DENSITY; INTERFACE TRAPS; INTERFACIAL OXIDE LAYERS; IV CHARACTERISTICS; POLYANILINE FILM; POLYMER LAYERS; RECTIFICATION RATIO; SCHOTTKY DIODES; SERIES RESISTANCES; SIC DEVICES;

ATOMIC FORCE MICROSCOPY; POLYANILINE; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SURFACE ROUGHNESS;

HETEROJUNCTIONS;

EID: 79955834161     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/20/205101     Document Type: Article

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