Nitride-based photodetectors with unactivated Mg-doped GaN cap layer

Sensors and Actuators, A: Physical

Volumn 143, Issue 2, 2008, Pages 191-195

  Lam, K T ^a   Chang, P C ^b   Chang, S J ^c   Yu, C L ^c   Lin, Y C ^c   Sun, Y X ^d   Chen, C H ^e  

^a LEADER UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^c INSTITUTE OF MICROELECTRONICS   (China)

^d CHINA UNIVERSITY OF PETROLEUM   (China)

^e CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Cap layer; Mg doped GaN; MOCVD; Semi insulating

Indexed keywords

GALLIUM COMPOUNDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SCHOTTKY BARRIER DIODES;

SCHOTTKY BARRIER HEIGHT; SEMI INSULATING LAYERS;

PHOTODETECTORS;

EID: 41349106161     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.10.075     Document Type: Article

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