AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures

Microelectronics Journal

Volumn 40, Issue 1, 2009, Pages 104-107

  Asgari, A ^a,b   Ahmadi, E ^a   Kalafi, M ^a  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

AlGaN GaN; Quantum well; UV detectors

Indexed keywords

ALUMINUM; ASTROPHYSICS; DETECTORS; DOPPLER EFFECT; GALLIUM NITRIDE; HETEROJUNCTIONS; METAL DETECTORS; MODEL STRUCTURES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; ULTRAVIOLET DETECTORS;

ALGAN/GAN; BARRIER HEIGHTS; BARRIER WIDTHS; CUTOFF WAVELENGTHS; DETECTIVITY; HETEROSTRUCTURES; MOLE FRACTIONS; MQW STRUCTURES; MULTI QUANTUM WELLS; POLARIZATION FIELDS; QUANTUM WELL; RED SHIFTS; RESPONSIVITY; TRANSITION ENERGIES; UV DETECTORS; WELL WIDTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 57849148498     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.087     Document Type: Article

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