Electrical characterization of n-GaN epilayers using transparent polyaniline Schottky contacts

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2007-2009

  Nakano, Yoshitaka ^a   Matsuki, Nobuyuki ^b   Irokawa, Yoshihiro ^b   Sumiya, Masatomo ^b  

^a CHUBU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Defect levels; Electrical properties; GaN; MOCVD; Schottky barriers

Indexed keywords

DEFECT LEVELS; ELECTRICAL PROPERTY; GAN; MOCVD; SCHOTTKY BARRIERS;

CUTOFF FREQUENCY; DEFECTS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; POLYANILINE;

SCHOTTKY BARRIER DIODES;

EID: 77955786227     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983627     Document Type: Conference Paper

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