-
1
-
-
0028385147
-
Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes
-
Nakamura S., Mukai T., and Senoh M. Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes. Appl. Phys. Lett. 64 (1994) 1687-1689
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 1687-1689
-
-
Nakamura, S.1
Mukai, T.2
Senoh, M.3
-
2
-
-
20844442604
-
GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
-
Art. No. 221101
-
Horng R.H., Yang C.C., Wu J.Y., Huang S.H., Lee C.E., and Wuu D.S. GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography. Appl. Phys. Lett. 86 May (2005) Art. No. 221101
-
(2005)
Appl. Phys. Lett.
, vol.86
, Issue.May
-
-
Horng, R.H.1
Yang, C.C.2
Wu, J.Y.3
Huang, S.H.4
Lee, C.E.5
Wuu, D.S.6
-
3
-
-
0036493177
-
InGaN/GaN multiquantum well blue and green light emitting diodes
-
Chang S.J., Lai W.C., Su Y.K., Chen J.F., Liu C.H., and Liaw U.H. InGaN/GaN multiquantum well blue and green light emitting diodes. IEEE J. Sel. Top. Quan. Electron. 8 (2002) 278-283
-
(2002)
IEEE J. Sel. Top. Quan. Electron.
, vol.8
, pp. 278-283
-
-
Chang, S.J.1
Lai, W.C.2
Su, Y.K.3
Chen, J.F.4
Liu, C.H.5
Liaw, U.H.6
-
4
-
-
19744374735
-
Solid-state light sources getting smart
-
Schubert E.F., and Kim J.K. Solid-state light sources getting smart. Science 308 (2005) 1274-1278
-
(2005)
Science
, vol.308
, pp. 1274-1278
-
-
Schubert, E.F.1
Kim, J.K.2
-
5
-
-
0242696158
-
Highly reliable nitride based LEDs with SPS + ITO upper contacts
-
Chang S.J., Chang C.S., Su Y.K., Chuang R.W., Lin Y.C., Shei S.C., Lo H.M., Lin H.Y., and Ke J.C. Highly reliable nitride based LEDs with SPS + ITO upper contacts. IEEE J. Quan. Electron. 39 (2003) 1439-1443
-
(2003)
IEEE J. Quan. Electron.
, vol.39
, pp. 1439-1443
-
-
Chang, S.J.1
Chang, C.S.2
Su, Y.K.3
Chuang, R.W.4
Lin, Y.C.5
Shei, S.C.6
Lo, H.M.7
Lin, H.Y.8
Ke, J.C.9
-
6
-
-
0029779805
-
InGaN-based multi-quantum-well-structure laser diodes
-
Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., and Sugimoto Y. InGaN-based multi-quantum-well-structure laser diodes. Jpn. J. Appl. Phys. 35 (1996) L74-L76
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
-
7
-
-
9944231366
-
Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE
-
Iida K., Kawashima T., Miyazaki A., Kasugai H., Mishima S., Honshio A., Miyake Y., Iwaya M., Kamiyama S., Amano H., and Akasaki I. Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE. J. Crystal Growth 272 (2004) 270-273
-
(2004)
J. Crystal Growth
, vol.272
, pp. 270-273
-
-
Iida, K.1
Kawashima, T.2
Miyazaki, A.3
Kasugai, H.4
Mishima, S.5
Honshio, A.6
Miyake, Y.7
Iwaya, M.8
Kamiyama, S.9
Amano, H.10
Akasaki, I.11
-
8
-
-
21044450529
-
Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer
-
Murata T., Hikita M., Hirose Y., Uemoto Y., and Inoue K. Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer. IEEE Tran. Electron. Dev. (2005) 1042-1047
-
(2005)
IEEE Tran. Electron. Dev.
, pp. 1042-1047
-
-
Murata, T.1
Hikita, M.2
Hirose, Y.3
Uemoto, Y.4
Inoue, K.5
-
10
-
-
23944475967
-
AlGaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates
-
Higashiwaki M., and Matsui T. AlGaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates. Jpn. J. Appl. Phys. 44 (2005) L475-L478
-
(2005)
Jpn. J. Appl. Phys.
, vol.44
-
-
Higashiwaki, M.1
Matsui, T.2
-
12
-
-
0037852176
-
High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
-
Chiou Y.Z., Su Y.K., Chang S.J., Gong J., Lin Y.C., Liu S.H., and Chang C.S. High detectivity InGaN-GaN multiquantum well p-n junction photodiodes. IEEE J. Quan. Electron. 39 (2003) 681-685
-
(2003)
IEEE J. Quan. Electron.
, vol.39
, pp. 681-685
-
-
Chiou, Y.Z.1
Su, Y.K.2
Chang, S.J.3
Gong, J.4
Lin, Y.C.5
Liu, S.H.6
Chang, C.S.7
-
13
-
-
0032157141
-
High-performance GaN p-n junction photodetectors for solar ultraviolet applications
-
Monroy E., Muňoz E., Sánchez F.J., Calley F., Calleja E., Beaumont B., Gibart P., Muňoz J.A., and Cussó F. High-performance GaN p-n junction photodetectors for solar ultraviolet applications. Semicond. Sci. Technol. 13 (1998) 1042-1046
-
(1998)
Semicond. Sci. Technol.
, vol.13
, pp. 1042-1046
-
-
Monroy, E.1
Muňoz, E.2
Sánchez, F.J.3
Calley, F.4
Calleja, E.5
Beaumont, B.6
Gibart, P.7
Muňoz, J.A.8
Cussó, F.9
-
14
-
-
4344590736
-
Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity
-
Biyikli N., Kimukin I., Aytur O., and Ozbay E. Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity. IEEE Photon. Technol. Lett. 16 (2004) 1718-1720
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, pp. 1718-1720
-
-
Biyikli, N.1
Kimukin, I.2
Aytur, O.3
Ozbay, E.4
-
15
-
-
20244371333
-
0.63N metal-semiconductor-metal photodetectors with recessed electrodes
-
0.63N metal-semiconductor-metal photodetectors with recessed electrodes. IEEE Photon. Technol. Lett. 17 (2005) 875-877
-
(2005)
IEEE Photon. Technol. Lett.
, vol.17
, pp. 875-877
-
-
Yu, C.L.1
Chen, C.H.2
Chang, S.J.3
Su, Y.K.4
Chen, S.C.5
Chang, P.C.6
Chen, P.C.7
Wu, M.H.8
Chen, H.C.9
Su, K.C.10
-
16
-
-
0038083067
-
GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes
-
Su Y.K., Chang S.J., Chen C.H., Chen J.F., Chi G.C., Sheu J.K., Lai W.C., and Tsai J.M. GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes. IEEE Sens. J. 2 (2002) 366-371
-
(2002)
IEEE Sens. J.
, vol.2
, pp. 366-371
-
-
Su, Y.K.1
Chang, S.J.2
Chen, C.H.3
Chen, J.F.4
Chi, G.C.5
Sheu, J.K.6
Lai, W.C.7
Tsai, J.M.8
-
17
-
-
17444373969
-
Blue, green and white InGaN light-emitting diodes grown on Si
-
Shih C.F., Chen N.C., Chang C.A., and Liu K.S. Blue, green and white InGaN light-emitting diodes grown on Si. Jpn. J. Appl. Phys. 44 (2005) L140-L143
-
(2005)
Jpn. J. Appl. Phys.
, vol.44
-
-
Shih, C.F.1
Chen, N.C.2
Chang, C.A.3
Liu, K.S.4
-
18
-
-
6344238748
-
Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si
-
Ishikawa H., Asano K., Zhang B., Egawa T., and Jimbo T. Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si. Phys. Status Solidi A 201 (2004) 2653-2657
-
(2004)
Phys. Status Solidi A
, vol.201
, pp. 2653-2657
-
-
Ishikawa, H.1
Asano, K.2
Zhang, B.3
Egawa, T.4
Jimbo, T.5
-
19
-
-
4444333131
-
AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation
-
Iwakami S., Yanagihara M., Machida O., Chino E., Kaneko N., Goto H., and Ohtsuka K. AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation. Jpn. J. Appl. Phys. 43 (2004) L831-L833
-
(2004)
Jpn. J. Appl. Phys.
, vol.43
-
-
Iwakami, S.1
Yanagihara, M.2
Machida, O.3
Chino, E.4
Kaneko, N.5
Goto, H.6
Ohtsuka, K.7
-
20
-
-
0043195443
-
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates
-
Curutchet A., Malbert N., Labat N., Touboul A., Gaquiere C., Minko A., and Uren M. Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (2003) 1713-1718
-
(2003)
Microelectron. Reliab.
, vol.43
, pp. 1713-1718
-
-
Curutchet, A.1
Malbert, N.2
Labat, N.3
Touboul, A.4
Gaquiere, C.5
Minko, A.6
Uren, M.7
-
21
-
-
0037567426
-
Material and device issues of AlGaN/GaN HEMTs on silicon substrates
-
Javorka P., Alam A., Marso A., Wolter M., Kuzmik J., Fox A., Heuken M., and Kordos P. Material and device issues of AlGaN/GaN HEMTs on silicon substrates. Microelectron. J. 34 (2003) 435-437
-
(2003)
Microelectron. J.
, vol.34
, pp. 435-437
-
-
Javorka, P.1
Alam, A.2
Marso, A.3
Wolter, M.4
Kuzmik, J.5
Fox, A.6
Heuken, M.7
Kordos, P.8
-
22
-
-
0035899217
-
Static measurements of GaN MESFETs on (111) Si substrates
-
Hoel V., Guhel Y., Boudart B., Gaquiere C., De Jaeger J.C., Lahreche H., and Gibart P. Static measurements of GaN MESFETs on (111) Si substrates. Electron. Lett. 37 (2001) 1095-1096
-
(2001)
Electron. Lett.
, vol.37
, pp. 1095-1096
-
-
Hoel, V.1
Guhel, Y.2
Boudart, B.3
Gaquiere, C.4
De Jaeger, J.C.5
Lahreche, H.6
Gibart, P.7
-
23
-
-
1342347335
-
Microcrystalline GaN film grown on Si (1 0 0) and its application to MSM photodiode
-
Hassan Z., Lee Y.C., Yam F.K., Abdullah M.J., Ibrahim K., and Kordesch M.E. Microcrystalline GaN film grown on Si (1 0 0) and its application to MSM photodiode. Mater. Chem. Phys. 84 (2004) 369-374
-
(2004)
Mater. Chem. Phys.
, vol.84
, pp. 369-374
-
-
Hassan, Z.1
Lee, Y.C.2
Yam, F.K.3
Abdullah, M.J.4
Ibrahim, K.5
Kordesch, M.E.6
-
24
-
-
33644850069
-
Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy
-
Schulze F., Dadgar A., Blasing J., Hempel T., Diez A., Christen J., and Krost A. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. J. Crystal Growth 289 (2006) 485-488
-
(2006)
J. Crystal Growth
, vol.289
, pp. 485-488
-
-
Schulze, F.1
Dadgar, A.2
Blasing, J.3
Hempel, T.4
Diez, A.5
Christen, J.6
Krost, A.7
-
25
-
-
4444288553
-
Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer
-
Lee M.L., Sheu J.K., Su Y.K., Chang S.J., Lai W.C., and Chi G.C. Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer. IEEE Electron Device Lett. 25 (2004) 593-595
-
(2004)
IEEE Electron Device Lett.
, vol.25
, pp. 593-595
-
-
Lee, M.L.1
Sheu, J.K.2
Su, Y.K.3
Chang, S.J.4
Lai, W.C.5
Chi, G.C.6
-
26
-
-
2942708198
-
Nitride-based LEDs with 800 °C-grown p-AlInGaN/GaN double cap layers
-
Chang S.J., Wu L.W., Su Y.K., Hsu Y.P., Lai W.C., Tsai J.M., Sheu J.K., and Lee C.T. Nitride-based LEDs with 800 °C-grown p-AlInGaN/GaN double cap layers. IEEE Photon. Technol. Lett. 16 (2004) 1447-1449
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, pp. 1447-1449
-
-
Chang, S.J.1
Wu, L.W.2
Su, Y.K.3
Hsu, Y.P.4
Lai, W.C.5
Tsai, J.M.6
Sheu, J.K.7
Lee, C.T.8
-
27
-
-
0347968279
-
Nitride-based LEDs with p-InGaN capping layer
-
Chang S.J., Chen C.H., Chang P.C., Su Y.K., Chen P.C., Jhou Y.D., Hung H., Wang C.M., and Huang B.R. Nitride-based LEDs with p-InGaN capping layer. IEEE Tran. Electron. Dev. 50 (2003) 2567-2570
-
(2003)
IEEE Tran. Electron. Dev.
, vol.50
, pp. 2567-2570
-
-
Chang, S.J.1
Chen, C.H.2
Chang, P.C.3
Su, Y.K.4
Chen, P.C.5
Jhou, Y.D.6
Hung, H.7
Wang, C.M.8
Huang, B.R.9
-
28
-
-
0037053873
-
Doping process and dopant characteristics of GaN
-
and references therein
-
Sheu J.K., and Chi G.C. Doping process and dopant characteristics of GaN. J. Phys. 14 22 (2002) R657-R702 and references therein
-
(2002)
J. Phys.
, vol.14
, Issue.22
-
-
Sheu, J.K.1
Chi, G.C.2
|