메뉴 건너뛰기




Volumn 135, Issue 2, 2007, Pages 502-506

AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

Author keywords

AlGaN; MSM; Photodetectors; Si substrates; UV

Indexed keywords

ALUMINUM COMPOUNDS; DARK CURRENTS; LOW TEMPERATURE EFFECTS; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES;

EID: 34047132930     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.09.017     Document Type: Article
Times cited : (15)

References (28)
  • 1
    • 0028385147 scopus 로고
    • Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes
    • Nakamura S., Mukai T., and Senoh M. Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes. Appl. Phys. Lett. 64 (1994) 1687-1689
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1687-1689
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3
  • 2
    • 20844442604 scopus 로고    scopus 로고
    • GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
    • Art. No. 221101
    • Horng R.H., Yang C.C., Wu J.Y., Huang S.H., Lee C.E., and Wuu D.S. GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography. Appl. Phys. Lett. 86 May (2005) Art. No. 221101
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.May
    • Horng, R.H.1    Yang, C.C.2    Wu, J.Y.3    Huang, S.H.4    Lee, C.E.5    Wuu, D.S.6
  • 4
    • 19744374735 scopus 로고    scopus 로고
    • Solid-state light sources getting smart
    • Schubert E.F., and Kim J.K. Solid-state light sources getting smart. Science 308 (2005) 1274-1278
    • (2005) Science , vol.308 , pp. 1274-1278
    • Schubert, E.F.1    Kim, J.K.2
  • 8
    • 21044450529 scopus 로고    scopus 로고
    • Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer
    • Murata T., Hikita M., Hirose Y., Uemoto Y., and Inoue K. Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer. IEEE Tran. Electron. Dev. (2005) 1042-1047
    • (2005) IEEE Tran. Electron. Dev. , pp. 1042-1047
    • Murata, T.1    Hikita, M.2    Hirose, Y.3    Uemoto, Y.4    Inoue, K.5
  • 10
    • 23944475967 scopus 로고    scopus 로고
    • AlGaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates
    • Higashiwaki M., and Matsui T. AlGaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates. Jpn. J. Appl. Phys. 44 (2005) L475-L478
    • (2005) Jpn. J. Appl. Phys. , vol.44
    • Higashiwaki, M.1    Matsui, T.2
  • 14
    • 4344590736 scopus 로고    scopus 로고
    • Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity
    • Biyikli N., Kimukin I., Aytur O., and Ozbay E. Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity. IEEE Photon. Technol. Lett. 16 (2004) 1718-1720
    • (2004) IEEE Photon. Technol. Lett. , vol.16 , pp. 1718-1720
    • Biyikli, N.1    Kimukin, I.2    Aytur, O.3    Ozbay, E.4
  • 17
    • 17444373969 scopus 로고    scopus 로고
    • Blue, green and white InGaN light-emitting diodes grown on Si
    • Shih C.F., Chen N.C., Chang C.A., and Liu K.S. Blue, green and white InGaN light-emitting diodes grown on Si. Jpn. J. Appl. Phys. 44 (2005) L140-L143
    • (2005) Jpn. J. Appl. Phys. , vol.44
    • Shih, C.F.1    Chen, N.C.2    Chang, C.A.3    Liu, K.S.4
  • 18
    • 6344238748 scopus 로고    scopus 로고
    • Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si
    • Ishikawa H., Asano K., Zhang B., Egawa T., and Jimbo T. Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si. Phys. Status Solidi A 201 (2004) 2653-2657
    • (2004) Phys. Status Solidi A , vol.201 , pp. 2653-2657
    • Ishikawa, H.1    Asano, K.2    Zhang, B.3    Egawa, T.4    Jimbo, T.5
  • 20
    • 0043195443 scopus 로고    scopus 로고
    • Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates
    • Curutchet A., Malbert N., Labat N., Touboul A., Gaquiere C., Minko A., and Uren M. Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (2003) 1713-1718
    • (2003) Microelectron. Reliab. , vol.43 , pp. 1713-1718
    • Curutchet, A.1    Malbert, N.2    Labat, N.3    Touboul, A.4    Gaquiere, C.5    Minko, A.6    Uren, M.7
  • 25
    • 4444288553 scopus 로고    scopus 로고
    • Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer
    • Lee M.L., Sheu J.K., Su Y.K., Chang S.J., Lai W.C., and Chi G.C. Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer. IEEE Electron Device Lett. 25 (2004) 593-595
    • (2004) IEEE Electron Device Lett. , vol.25 , pp. 593-595
    • Lee, M.L.1    Sheu, J.K.2    Su, Y.K.3    Chang, S.J.4    Lai, W.C.5    Chi, G.C.6
  • 28
    • 0037053873 scopus 로고    scopus 로고
    • Doping process and dopant characteristics of GaN
    • and references therein
    • Sheu J.K., and Chi G.C. Doping process and dopant characteristics of GaN. J. Phys. 14 22 (2002) R657-R702 and references therein
    • (2002) J. Phys. , vol.14 , Issue.22
    • Sheu, J.K.1    Chi, G.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.