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Materials Science and Engineering: B

Volumn 176, Issue 9, 2011, Pages 736-739

Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(1 1 1) substrates

(5) Jiang, Dayong a Qin, Jieming a,b Zhang, Xiyan a Bai, Zhaohui a Shen, Dezhen c

a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b INNER MONGOLIA UNIVERSITY FOR NATIONALITIES (China)

c CHANGCHUN INSTITUTE OF OPTICS (China)

Author keywords

MgZnO; MSM; Nanowall; Photodetector; Responsivity

Indexed keywords

GEOMETRY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTOR ALLOYS; ZINC ALLOYS;

EXTERNAL QUANTUM EFFICIENCY; MOLECULAR-BEAM EPITAXY; MSM; NANOWALL NETWORKS; NANOWALLS; PLANAR GEOMETRIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESPONSIVITY; SI (1 1 1); ULTRA-VIOLET PHOTODETECTORS;

PHOTODETECTORS;

EID: 79955598472 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2011.03.001 Document Type: Article

Times cited : (11)

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