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Volumn 492, Issue 1-2, 2010, Pages 300-302

Hole concentration test of p-type GaN by analyzing the spectral response of p-n+ structure GaN ultraviolet photodetector

Author keywords

Computer simulations; Nitride materials; Photoconductivity and photovoltaics

Indexed keywords

GAN LAYERS; NITRIDE MATERIALS; P-TYPE GAN; PHOTOCONDUCTIVITY AND PHOTOVOLTAICS; SIMULATION CALCULATION; SPECTRAL RESPONSE; TWO WAVELENGTH; ULTRA-VIOLET PHOTODETECTORS;

EID: 76549092113     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.11.078     Document Type: Article
Times cited : (8)

References (10)
  • 7
    • 76549133990 scopus 로고    scopus 로고
    • We used the freeware program 'AMPS-1D' supplied by the Electronic Materials and Processing Research Laboratory of Penn State University, USA
    • We used the freeware program 'AMPS-1D' supplied by the Electronic Materials and Processing Research Laboratory of Penn State University, USA.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.