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Volumn 492, Issue 1-2, 2010, Pages 300-302
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Hole concentration test of p-type GaN by analyzing the spectral response of p-n+ structure GaN ultraviolet photodetector
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Author keywords
Computer simulations; Nitride materials; Photoconductivity and photovoltaics
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Indexed keywords
GAN LAYERS;
NITRIDE MATERIALS;
P-TYPE GAN;
PHOTOCONDUCTIVITY AND PHOTOVOLTAICS;
SIMULATION CALCULATION;
SPECTRAL RESPONSE;
TWO WAVELENGTH;
ULTRA-VIOLET PHOTODETECTORS;
COMPUTATIONAL METHODS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HOLE CONCENTRATION;
OPTOELECTRONIC DEVICES;
PHOTOCONDUCTIVITY;
PHOTODETECTORS;
PHOTOVOLTAIC EFFECTS;
COMPUTER SIMULATION;
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EID: 76549092113
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2009.11.078 Document Type: Article |
Times cited : (8)
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References (10)
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