Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

Procedia Engineering

Volumn 5, Issue , 2010, Pages 633-636

  Shi, L ^a   Sarubbi, F ^a   Nanver, L K ^a   Kroth, U ^c   Gottwald, A ^c   Nihtianov, S ^a,b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ASML   (Netherlands)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

Photodiodes; Radiation detectors; Responsivity; Ultra shallow junctions; Vacuum ultraviolet

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; PHOTODIODES; RADIATION DETECTORS;

EXTREME ULTRAVIOLETS; IRRADIATION STABILITIES; OPTICAL PERFORMANCE; REDUCED COMPLEXITY; RESPONSIVITY; SILICON PHOTODIODE; ULTRA SHALLOW JUNCTION; VACUUM ULTRAVIOLETS;

SILICON DETECTORS;

EID: 78650498219     PISSN: None     EISSN: 18777058     Source Type: Conference Proceeding    
DOI: 10.1016/j.proeng.2010.09.189     Document Type: Conference Paper

References (10)

1. F. Sarubbi, L. K. Nanver, T. L. M. Scholtes, and S. N. Nihtianov, "Extremely Ultra-Shallow p+-n Boron-Deposited Silicon Diodes Applied to DUV Photodiodes", in Proc. 66th Device Research Conference (DRC), 2008.
2. F. Sarubbi, L. K. Nanver, T. L. M. Scholtes, S. N. Nihtianov, and F. Scholze, "Pure boron-doped photodiodes: a solution for radiation detection in EUV lithography", in Proc. IEEE 38th European Solid-State Device Research Conference (ESSDERC), pp. 278-281, Sept. 2008.
3. L. Shi, F. Sarubbi, S. N. Nihtianov, L. K. Nanver, T. L. M. Scholtes, and F. Scholze, "High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application", in Proc. 35th Annual Conference of the IEEE Industrial Electronics Society (IECON), Porto, Portugal, Nov. 3-5, 2009, pp. 1891-1896.
4. International Technology Roadmap for Semiconductors: Lithography, 2007 Edition. Available at: http://www.itrs.net.
5. US Patent 7 586 108, Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector, September 8, 2009
6. A. Gottwald, U. Kroth, M. Richter, H. Schöppe, and G. Ulm, "UV and VUV detector-based radiometry at the MLS", submitted to Meas. Sci. Technol. (2010).
7. A. Gottwald, U. Kroth, M. Krumrey, M. Richter, F. Scholze, G. Ulm, "The PTB High-Accuracy Spectral Responsivity Scale in the VUV and X-Ray Range", Metrologia 43, S125-S129 (2006)
8. M. Richter, U. Kroth, A. Gottwald, C. Gerth, K. Tiedtke, T. Saito, I. Tassy, and K. Vogler, "Metrology of pulsed radiation for 157-nm lithography", Appl Opt. vol. 41, no. 34, pp. 7167-7172, Dec. 2002.
9. L. R. Canfield, R. E. Vest, R. Korde, H. Schmidtke, and R. Desor, "Absolute silicon photodiodes for 160 nm to 254 nm photons", Metrologia, vol. 35, p. 329, 1998.
10. K. Solt, H. Melchior, U. Kroth, P. Kuschnerus, V. Persch, H. Rabus, M. Richter, and G. Ulm, "PtSi-n-Si Schottky-barrier photodetectors with stable spectral responsivity in the 120-250 nm spectral range", Appl. Phys. Lett., vol. 69, no. 24, pp. 3662-3664, Dec. 1996.