GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1401-1408

  Teke, A ^a,b   Dogan, S ^a,c   Yun, F ^a   Reshchikov, M A ^a   Le, H ^a   Liu, X Q ^a   Morkoc H ^a   Zhang, S K ^d   Wang, W B ^d   Alfano, R R ^d  

^a Virginia Commonwealth University   (United States)

^b BALIKESIR UNIVERSITY   (Turkey)

^c ATATÜRK UNIVERSITY   (Turkey)

^d CITY COLLEGE OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

PHOTOGENERATED CARRIERS;

PHOTODETECTORS;

EID: 0037911657     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00068-6     Document Type: Article

References (28)

1. Morkoç H., Di Carlo A., Cingolani R. Solid-State Electron. 46:2002;157.
2. Kung P., Zhang X., Walker D., Saxler A., Piotrowsky J., Rogalski J.et al. Appl. Phys. Lett. 67:1995;3792.
3. Monroy E., Munoz E., Sanchez F.J., Calle F., Calleja E., Beaumont B.et al. Semicond. Sci. Technol. 13:1998;1042.
4. Sandvik P., Mi K., Shahedipour F., McClintock R., Yasan A., Kung P.et al. J. Cryst. Growth. 231(3):2001;366.
5. Osinsky A., Gangopadhyay S., Gaska R., Williams B., Khan A.A., Kuksenkow D.et al. Appl. Phys. Lett. 71(16):1997;2334.
6. Katz O., Garber V., Meyler B., Bahir G., Salzman J. Appl. Phys. Lett. 79(10):2001;1417.
7. Kuryatkov V.V., Kipshidze G.D., Nikishin S.A., Deelman P.W., Temkin H. Phys. Stat. Sol. (a). 188(1):2001;317.
8. Biyikli N., Kartaloglu T., Aytur O., Kimukin I., Ozbay E. Appl. Phys. Lett. 70(17):2001;2838.
9. Pau J.L., Monroy E., Sanchez-Garcia M.A., Calleja E., Munoz E. Mater. Sci. Eng. B - Solid. 93(1-3):2002;159.
10. Monray E., Calle F., Pau J.L., Munoz E., Omnes F., Beaumont B.et al. J. Cryst. Growth. 270:2001;541.
11. Moullet R., Hirano A., Iwaya M., Detchprohm T., Amona H., Akasaki I. Jpn. J. Appl. Phys. 40(Part 2):2001;L498.
12. Carrano J.C., Lambert D.J.H., Eiting C.J., Collins C.J., Li T., Wang S.et al. Appl. Phys. Lett. 76(7):2000;924.
13. Collins C.J., Chowdhury U., Wong M.M., Yang B., Beck A.L., Dupuis R.D.et al. Electron. Lett. 38(15):2002;824.
14. Kipshidze G., Kuryatkov V., Borisov B., Nikishin S., Holtz M., Chu S.N.G.et al. Phys. Stat. Sol. (a). 192(2):2002;286.
15. Shimada Y., Hirakawa K. Jpn. J. Appl. Phys. 37(part 1):1998;1421.
16. Raisky O.Y., Wang W.B., Alfano R.R., Reynolds C.L. Jr. Appl. Phys. Lett. 79(3):2001;430.
17. Raisky O.Y., Wang W.B., Alfano R.R., Reynolds C.L. Jr., Stampone D.V., Focht M.W. Appl. Phys. Lett. 74(1):1999;129.
18. Bhattacharya P. Semiconductor optoelectronics devices. 1994;Prentice-Hall.
19. Zhang S.K., Wang W.B., Yun F., He L., Morkoç H., Zhou X.et al. Appl. Phys. Lett. 81(24):2002;4628.
20. He L., Reshchikov M.A., Yun F., Huang D., King T., Morkoç H. Appl. Phys. Lett. 81:2002;2178.
21. Cingolani R., Botchkarev A., Tang H., Morkoç H., Traetta G., Coli G.et al. Phys. Rev. B. 61(4):2000;2711.
22. Leroux M., Grandjean N., Massies J., Gil B., Lefebvre P., Bigenwald P. Phys. Rev. B. 60(3):1999;1496.
23. Sanchez-Rojas J.L., Sacedon A., Calle F., Calleja E., Munoz E. Appl. Phys. Lett. 65(17):1994;2214.
24. Horikoshi Y., Fischer A., Ploog K. Phys. Rev. B. 31(12):1985;7895.
25. Ambacher O., Foutz B., Smart J., Shealy J.R., Weimann N.G., Chu K.et al. J. Appl. Phys. 87(1):2000;334.
26. Fiorentini V., Bernardini F., Della Sala F., Di Carlo A., Lugli P. Phys. Rev. B. 60(2):1999;8849.
27. Pabla A.S., Sanchez-Rojas J.L., Woodhead J., Grey R., David J.P.R., Rees G.J.et al. Appl. Phys. Lett. 63(6):1993;752.
28. Razeghi M., Rogalski A. J. Appl. Phys. 79(10):1996;7433.