Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2012, Pages 3952-3957

  Shi, L ^a   Nihtianov, S N ^a   Scholze, F ^b   Nanver, L K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

dark current; extreme ultraviolet (EUV) radiation; photodiodes; responsivity; ultrashallow junctions

Indexed keywords

13.5 NM; ELECTRICAL PERFORMANCE; EXTREME ULTRAVIOLET RADIATIONS; EXTREME ULTRAVIOLETS; HIGH-SENSITIVITY; LAYER STACKS; NEXT GENERATION LITHOGRAPHY; OPERATING WAVELENGTH; OPTICAL PERFORMANCE; PURE BORON; RESPONSIVITY; SI-BASED; SILICON-BASED; SPECTRAL RANGE; ULTRA SHALLOW JUNCTION;

DARK CURRENTS; INDUSTRIAL APPLICATIONS; INDUSTRIAL ELECTRONICS; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON NITRIDE; SILICON OXIDES;

DIODES;

EID: 84873037080     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2012.6389260     Document Type: Conference Paper

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