Growth and characteristics of Ni-based Schottky-type Al x Ga 1-x N ultraviolet photodetectors with AlGaNGaN superlattices

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Park, Ki Yon ^a,b   Kwon, Bong Joon ^a   Cho, Yong Hoon ^a   Lee, Soon Ae ^b   Son, Jeong Hwan ^b  

^a Chungbuk National University   (South Korea)

^b Genicom Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL0.2 GA0.8 NGAN SL LAYERS; ALX GA1-X NGAN HETEROSTRUCTURES; INSERTION OF AL0.2 GA0.8 NGAN SUPERLATTICES;

HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SUPERLATTICES; ULTRAVIOLET DETECTORS;

GALLIUM NITRIDE;

EID: 29744437715     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2142098     Document Type: Review

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