GaN MSM photodetectors fabricated on bulk GaN with low dark-current and high UV/visible rejection ratio

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2473-2475

  Xie, Feng ^a   Lu, Hai ^a,b   Chen, Dunjun ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

GaN; Homoepitaxy; Metal semiconductor metal; Photodetector

Indexed keywords

APPLIED BIAS; DISLOCATION DENSITIES; GAN; GAN SUBSTRATE; HIGH TEMPERATURE; HOMOEPITAXIAL LAYERS; HOMOEPITAXY; MAPPING TECHNIQUES; METAL SEMICONDUCTOR METAL; MSM PHOTODETECTOR; ORDERS OF MAGNITUDE; PHOTOGENERATED HOLES; REJECTION RATIOS; RESPONSIVITY; ROOM TEMPERATURE; SURFACE STATE; ULTRA-VIOLET PHOTODETECTORS;

GALLIUM ALLOYS; HIGH TEMPERATURE OPERATIONS; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 79960717733     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000884     Document Type: Article

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