Contact properties of Au/Mg0.27Zn0.73O by different annealing processes

Journal of Physical Chemistry C

Volumn 114, Issue 49, 2010, Pages 21757-21761

  Han, S ^a,b   Zhang, J Y ^a   Zhang, Z Z ^a   Wang, L K ^a,b   Zhao, Y M ^a,b   Zheng, J ^a,b   Cao, J M ^c   Yao, B ^a   Zhao, D X ^a   Shen, D Z ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; AS-GROWN; CONTACT PROPERTIES; CURRENT VOLTAGE CURVE; DIFFERENT PROCESS; GRAIN BOUNDARY DENSITIES; IN-VACUUM; MGZNO THIN FILM; OHMIC BEHAVIOR; ORDERS OF MAGNITUDE; PHOTORESPONSES; SCHOTTKY; SCHOTTKY CHARACTERISTICS; SCHOTTKY CONTACTS; SCHOTTKY DETECTORS; VACUUM-ANNEALING;

CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; THIN FILMS; VACUUM; ZINC;

ANNEALING;

EID: 78650264456     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp108795u     Document Type: Article

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