Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection

2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012

Volumn , Issue , 2012, Pages 412-416

  Wang, Dongbo ^a   Jiao, Shujie ^a   Sun, Sujuan ^a   Zhao, Liancheng ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

AlInGaN; photodection; Ultraviolet

Indexed keywords

ALINGAN; APPLIED BIAS; AUGER RECOMBINATION; BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; CUTOFF WAVELENGTHS; DUAL BAND; GAN BUFFER; HIGH-CRYSTALLINE QUALITY; METAL SEMICONDUCTOR METAL; METAL-ORGANIC VAPOR PHASE EPITAXY; METAL-SEMICONDUCTOR-METAL PHOTODIODES; ORDERS OF MAGNITUDE; PEAK RESPONSIVITY; PHOTODECTION; REJECTION RATIOS; RESPONSIVITY; SCHOTTKY BEHAVIORS; ULTRA VIOLET DETECTION; ULTRAVIOLET; ULTRAVIOLET REGION; VISIBLE BLIND;

GALLIUM NITRIDE; METALLIC FILMS; METALLORGANIC VAPOR PHASE EPITAXY; MICROELECTRONICS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONS;

ALUMINUM;

EID: 84869163212     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICoOM.2012.6316303     Document Type: Conference Paper

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