GaN/AlN quantum disc single-nanowire photodetectors

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1323-1327

  Rigutti, L ^a   Tchernycheva, M ^a   De Luna Bugallo, A ^a   Jacopin, G ^a   Julien, F H ^a   Songmuang, R ^b   Monroy, E ^b   Chou, S T ^c   Lin, Y T ^c   Tseng, P H ^c   Tu, L W ^c   Fortuna, F ^a   Zagonel, L ^d   Kociak, M ^d   Stephan, O ^d  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CEA GRENOBLE   (France)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d UNIVERSITÉ PARIS SUD   (France)

Author keywords

GaN AlN; Nanowires; Photodetectors; Photoelectrical properties; Photoluminescence

Indexed keywords

GAN/ALN; HETEROSTRUCTURES; INTERBAND ABSORPTION; MICROPHOTOLUMINESCENCE SPECTROSCOPY; PHOTO-ELECTRICAL PROPERTIES; PHOTOCONDUCTIVE GAINS; PHOTORESPONSES; QUANTUM DISCS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTRAL RANGE;

ELECTRONIC PROPERTIES; HETEROJUNCTIONS; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

PHOTODETECTORS;

EID: 77954297252     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983652     Document Type: Article

References (17)

1. H. Sekiguchi, K. Kishino, and A. Kikuchi, Electron. Lett. 44 (2), 151 (2008).
2. A. B. Greytak, C. J. Barrelet, Y. Li, and C. M. Lieber, Appl. Phys. Lett. 87, 151103 (2005).
3. R.-S. Chen, H.-Y. Chen, C.-Y. Lu, K.-H. Chen, C.-P. Chen, L.-C. Chen, and Y.-J. Yang, Appl. Phys. Lett. 91, 223106 (2007).
4. F. Glas, Phys. Rev. B 74, 121302 (2006).
5. J. Ristic, E. Calleja, M. A. Sanchez-Garca, J. M. Ulloa, J. Sanchez-Paramo, J. M. Calleja, U. Jahn, A. Trampert, and K. H. Ploog, Phys. Rev. B 68, 125305 (2003)
6. J. Ristic, E. Calleja, A. Trampert, S. Fernandez-Garrido, C. Rivera, U. Jahn, and K. H. Ploog, Phys. Rev. Lett. 94, 146102 (2005)
7. A. Kikuchi, M. Kawai, M. Tada, and J. J. Kishino, J. Appl. Phys. 43, L1524 (2004).
8. L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo, and K. Y. Hsieh, Appl. Phys. Lett. 82, 1601 (2003).
9. R. Songmuang, O. Landre, and B. Daudin, Appl. Phys. Lett. 91, 251902 (2007).
10. M. Tchernycheva, C. Sartel, G. Cirlin, L. Travers, G. Patriarche, J.-C. Harmand Le. Si Dang, J. Renard, B. Gayral, L. Nevou, and F. Julien, Nanotechnol. 18, 385306 (2006)
11. M. Tchernycheva, C. Sartel, G. Cirlin, et al. Nanotechnol. 18, 385306 (2006);
12. M. Tchernycheva, C. Sartel, G. Cirlin, L. Travers, G. Patriarche, L. Largeau, O. Mauguin, J.-C. Harmand Le. Si Dang, J. Renard, B. Gayral, L. Nevou, and F. Julien, Phys. Status Solidi C 5, 1556 (2008).
13. L. Rigutti, M. Tchernycheva, A. De Luna Bugallo G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, and F. Fortuna, Phys. Rev. B 81, 045411 (2010).
14. M. S. Son, S. I. Im, Y. S. Park, C. M. Park, T. W. Kang, and K.-H. Yoo, Mater. Sci. Eng. C 26, 886 (2006).
15. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. 7, 1003 (2007).
16. A. Singh, X. Li, V. Potasenko, G. Galantai, M. Kuno, H. Xing, and D. Jena, Nano Lett. 7, 2999 (2007).
17. R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v. d. Hart T. Stoica, and H. Lüth, Nano Lett. 5, 981 (2005).