Effects of annealing on the performance of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Materials Science in Semiconductor Processing

Volumn 11, Issue 2, 2008, Pages 59-62

  Yang, Weifeng ^a   Zhang, Feng ^a   Liu, Zhuguang ^a   Wu, Zhengyun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Annealing; MSM photodetectors; SiC

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; METAL ANALYSIS; METALS; NICKEL ALLOYS; NICKEL COMPOUNDS; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICIDES; SILICON CARBIDE; THERMAL EFFECTS;

CHEMICAL COMPONENTS; CURRENT VOLTAGES; DEPTH PROFILES; IDEALITY FACTORS; METAL SEMICONDUCTOR METALS; METAL-SEMICONDUCTOR-METAL PHOTODETECTORS; MSM DEVICES; MSM PHOTODETECTORS; NICKEL SILICIDES; PEAK RESPONSE; RESPONSIVITY; ROOM TEMPERATURES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SIC; SPECTRAL RESPONSIVITY; ULTRA-VIOLET PHOTODETECTORS; XPS MEASUREMENTS;

PHOTODETECTORS;

EID: 60849099899     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.11.001     Document Type: Article

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