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Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films

(4) Xie, Yannan a Huang, Huolin a Yang, Weifeng b Wu, Zhengyun a

a XIAMEN UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTHS; METAL SEMICONDUCTOR METAL; PEAK RESPONSIVITY; PHOTOCONDUCTIVE GAINS; REJECTION RATIOS; SCHOTTKY BARRIERS; SOL-GEL PROCESSING; THREE ORDERS OF MAGNITUDE; TIO; ULTRA-VIOLET PHOTODETECTORS;

DESORPTION; GELS; OPTOELECTRONIC DEVICES; OXYGEN; OXYGEN VACANCIES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SOL-GEL PROCESS; SOL-GELS; SOLS; TITANIUM; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

METALS;

EID: 79551662202 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3537918 Document Type: Article

Times cited : (40)

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