Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 1, 2011, Pages 206-209

  Wu, Yan ^a,b   Girgis, Emad ^c   Ström, Valter ^a   Voit, Wolfgang ^a   Belova, Lyubov ^a   Rao, K V ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHINA UNIVERSITY OF GEOSCIENCES   (China)

^c NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

field effect transistors; In doping; inkjet printing; UV photodetectors; ZnO

Indexed keywords

DOPED ZNO; GATE VOLTAGES; HIGHLY SENSITIVE; IN DOPING; INK-JET TECHNIQUE; LOW COSTS; ON/OFF RATIO; SATURATION CURRENT; ULTRA-VIOLET LIGHT; ULTRAVIOLET DETECTION; UV LIGHT; UV PHOTODETECTORS; ZNO;

DISPLAY DEVICES; DOPING (ADDITIVES); ELECTRON MULTIPLIERS; INK; INK JET PRINTERS; INK JET PRINTING; MESFET DEVICES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; ULTRAVIOLET RADIATION; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 78651362437     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026264     Document Type: Article

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