Enhanced responsivity of photodetectors realized via impact ionization

Sensors

Volumn 12, Issue 2, 2012, Pages 1280-1287

  Yu, Ji ^a,b   Shan, Chong Xin ^a   Qiao, Qian ^a,b   Xie, Xiu Hua ^a,b   Wang, Shuang Peng ^a   Zhang, Zhen Zhong ^a   Shen, De Zhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Impact ionization; Photodetector; Responsivity

Indexed keywords

HEAVY ION; ZINC OXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; PHOTOMETRY; RADIATION EXPOSURE; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; TRANSDUCER;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; HEAVY IONS; LIGHT; PHOTOMETRY; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; TRANSDUCERS; ZINC OXIDE;

EID: 84863273900     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s120201280     Document Type: Article

References (22)

1. Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E.H. Ultrasensitive Solution-Cast Quantum Dot Photodetectors. Nature 2006, 442, 180-183.
2. Liu, K.W.; Sakurai, M.; Aono, M. ZnO-Based Ultraviolet Photodetectors. Sensors 2010, 10, 8604-8634.
3. Gong, X.; Tong, M.H.; Xia, Y.J.; Cai, W.Z.; Moon, J.S.; Cao, Y.; Yu, G.; Shieh, C.L.; Nilsson, B.; Heeger, A.J. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm. Science 2009, 325, 1665-1667.
4. Liu, C.W.; Lin, C.H. Metal-Insulator-Semiconductor Photodetectors. Sensors 2010, 10, 8797-8826.
5. Zhai, T.Y.; Fang, X.S.; Liao, M.Y.; Xu, X.J.; Zeng, H.B.; Yoshio, B.; Golberg, D. A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors. Sensors 2009, 9, 6504-6529.
6. Yao, Y.; Liang, Y.Y.; Shrotriya, V.; Xiao, S.Q.; Yu, L.P.; Yang, Y. Plastic Near-Infrared Photodetectors Utilizing Low Band Gap Polymer. Adv. Mater. 2007, 19, 3979-3983.
7. Lin, H.W.; Ku, S.Y.; Su, H.C.; Huang, C.W.; Lin, Y.T.; Wong, K.T.; Wu, C.C. Highly Efficient Visible-Blind Organic Ultraviolet Photodetectors. Adv. Mater. 2005, 17, 2489-2493.
8. Sze, S.M.; Ng, K.K. Physics of Semiconductor Devices, 3rd ed.; Wiley: Hoboken, NJ, USA, 2007; p. 36.
9. Sarasqueta, G.; Choudhury, K.R.; Subbiah, J.; So, F. Organic and Inorganic Blocking Layers for Solution-Processed Colloidal PbSe Nanocrystal Infrared Photodetectors. Adv. Funct. Mater. 2011, 21, 167-171.
10. Liu, J.S.; Shan, C.X.; Li, B.H.; Zhang, Z.Z.; Yang, C.L.; Shen, D.Z.; Fan, X.W. High Responsivity Ultraviolet Photodetector Realized via a Carrier-Trapping Process. Appl. Phys. Lett. 2010, 97, 251102:1-251102:3.
11. Zhu, H.; Shan, C.X.; Zhang, J.Y.; Zhang, Z.Z.; Li, B.H.; Zhao, D.X.; Yao, B.; Shen, D.Z.; Fan, X.W.; Tang, Z.K.; Hou, X.H.; Choy, K.L. Low-Threshold Electrically Pumped Random Lasers. Adv. Mater. 2010, 22, 1877-1881.
12. Zhu, H.; Shan, C.X.; Li, B.H.; Zhang, Z.Z.; Shen, D.Z.; Choy, K.L. Low-Threshold Electrically Pumped Ultraviolet Laser Diode. J. Mater. Chem. 2011, 21, 2848-2851.
13. Ma, X.Y.; Chen, P.L.; Li, D.S.; Zhang, Y.Y.; Yang, D.R. Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate. Appl. Phys. Lett. 2007, 91, 251109:1-251109:3.
14. Chen, P.L.; Ma, X.Y.; Yang, D.R. Fairly Pure Ultraviolet Electroluminescence from ZnO-Based Light-Emitting Devices. Appl. Phys. Lett. 2006, 89, 111112:1-111112:3.
15. 1-x O-Based Light Emitting Devices. Appl. Phys. Lett. 2007, 90, 251115:1-251115:3.
16. Wang, W.J.; Shan, C.X.; Zhu, H.; Ma, F.Y.; Shen, D.Z.; Fan, X.W.; Choy, K.L. Metal-Insulator-Semiconductor-Insulator-Metal Structured Titanium Dioxide Ultraviolet Photodetector. J. Phys. D: Appl. Phys. 2010, 43, 045102:1-045102:4.
17. Yen, T.F.; Yun, J.; Kim, S.J.; Cartwright, A.; Anderson, W.A. Photocurrent Enhancement in Nanocrystalline-ZnO/Si Heterojunction Metal-Semiconductor-Metal Photodetectors. Electrochem. Solid-State Lett. 2011, 14, H415-H418.
18. Zhu, H.; Shan, C.X.; Wang, L.K.; Zheng, J.; Zhang, J.Y.; Yao, B.; Shen, D.Z. Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain. J. Phys. Chem. C 2010, 114, 7169-7172.
19. Zhu, M. W.; Gong, J.; Sun, C.; Xia, J.H.; Jiang, X. Investigation of Correlation between the Microstructure and Electrical Properties of Sol-Gel Derived ZnO Based Thin Films. J. Appl. Phys. 2008, 104, 073113:1-073113:7.
20. Hudgins, J.L.; Simin, G.S.; Santi, E.; Khan, M.A. An Assessment of Wide Bandgap Semiconductors for Power Devices. IEEE Trans. Power Electron. 2003, 18, 907-914.
21. 2 as the Insulator. Appl. Phys. Lett. 2011, 98, 103502:1-103502:3.
22. 2 Nanoparticles on a GaN Surface. Appl. Phys. Lett. 2011, 98, 121117:1-121117:3.