GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 212-214

  Chang, S J ^a   Lee, M L ^a   Sheu, J K ^b   Lai, W C ^a   Su, Y K ^a   Chang, C S ^a   Kao, C J ^b   Chi, G C ^b   Tsai, J M ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

Author keywords

ITO; LT GaN; MSM; UV photodetector

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOCURRENTS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

DARK CURRENT; INDIUM TIN OXIDE; METAL CONTACTS; METAL SEMICONDUCTOR METAL DEVICES;

PHOTODETECTORS;

EID: 0038443548     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812147     Document Type: Letter

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