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Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2686-2690

Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterqstructures

(5) Kim, Dong Wook a Chea, Kyong Seok a Park, Yong Jo b Lee, In Hwan a Lee, Cheul Ro a

a Chonbuk National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; QUANTUM EFFICIENCY; RESPONSE TIME (COMPUTER SYSTEMS); SEMICONDUCTING ALUMINUM COMPOUNDS; FREQUENCIES; SAPPHIRE; ULTRAVIOLET DEVICES;

CARRIER VELOCITY; INDUSTRIAL FLAME MONITORING; METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS; MISSILE TRACKING; GAUSSIAN PULSES; LATTICE MISMATCH; METAL-SEMICONDUCTOR-METALS (MSM);

ULTRAVIOLET DETECTORS; PHOTODETECTORS;

EID: 6344282385 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200405048 Document Type: Conference Paper

Times cited : (9)

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