High responsivity ultraviolet photodetector based on p-GaN/i-ZnO nanorod/n-ZnO:In nanorod

ECS Transactions

Volumn 28, Issue 4, 2010, Pages 27-32

  Chen, Chia Hsun ^a   Yan, Jheng Tai ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; NANORODS; OXIDE MINERALS; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR DEVICES; ZINC OXIDE;

ANODIC ALUMINA MEMBRANES; CONDUCTIVE ATOMIC FORCE MICROSCOPES; HETEROSTRUCTURED NANORODS; PHOTORESPONSIVITY; REJECTION RATIOS; RESPONSIVITY; ULTRA-VIOLET PHOTODETECTORS; VAPOR COOLING CONDENSATION METHODS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 78650445082     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/13377096     Document Type: Conference Paper

References (2)

1. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, Appl. Phys. Lett. 91, 231113 (2007).
2. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y.Bao, Y. H. Lo, and D. Wang, Nano Lett. 7, 1003 (2007).