Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2

Journal of Alloys and Compounds

Volumn 504, Issue SUPPL. 1, 2010, Pages

  Chang, P C ^a   Su, Y K ^a,c   Lee, K J ^b   Yu, C L ^c   Chang, S J ^c   Liu, C H ^d  

^a KUN SHAN UNIVERSITY   (Taiwan)

^b I SHOU UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

GaN; Ir Pt; Photodetector; Schottky barrier

Indexed keywords

APPLIED BIAS; CONTRAST RATIO; CURRENT TRANSPORT MECHANISM; GAN; IDEALITY FACTORS; IR/PT; REJECTION RATIOS; RESPONSIVITY; REVERSE LEAKAGE CURRENT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS;

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

ANNEALING;

EID: 77957571259     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.02.194     Document Type: Article

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