Solar-blind p-i-n photodetectors formed on SiO 2-patterned n-GaN templates

IEEE Journal of Quantum Electronics

Volumn 48, Issue 10, 2012, Pages 1305-1309

  Lee, Ming Lun ^a   Yeh, Yu Hsiang ^a,b   Tu, Shang Ju ^b  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN; photodetectors; solar blind; ultraviolet

Indexed keywords

ALGAN; ALGAN/GAN; CONTACT ELECTRODES; DETECTIVITY; DRY ETCHING PROCESS; FOUR-ORDER; GAN EPITAXIAL LAYERS; INCIDENT WAVELENGTH; P-I-N PHOTODETECTORS; PEAK RESPONSIVITY; PIN PHOTODIODE; REJECTION RATIOS; SELECTIVE GROWTH; SHORT-WAVELENGTH; SOLAR BLIND; SPECIFIC DETECTIVITY; SPECTRAL RESPONSE; ULTRAVIOLET; UNDERLYING LAYERS; ZERO-BIAS;

DIODES; OHMIC CONTACTS; PHOTODETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 84865249136     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2012.2196260     Document Type: Article

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