AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact

Solid-State Electronics

Volumn 54, Issue 4, 2010, Pages 488-491

  Lee, Han Cheng ^a   Su, Yan Kuin ^a,c   Lin, Jia Ching ^b   Cheng, Yi Cheng ^b   Li, Ta Ching ^b   Chang, Kuo Jen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

AlInGaN; Metal insulator semiconductor (MIS); Photodetectors (PDs); Ultraviolet (UV)

Indexed keywords

ALINGAN; ALUMINUM INDIUM GALLIUM NITRIDE; DEVICE PERFORMANCE; HIGH-WORK-FUNCTION METAL; METAL CONTACTS; METAL-INSULATOR-SEMICONDUCTOR (MIS); METAL-INSULATOR-SEMICONDUCTORS; REJECTION RATIOS; REVERSE BIAS; ULTRA-VIOLET;

ALUMINUM GALLIUM NITRIDE; GALLIUM ALLOYS; GALLIUM NITRIDE; IRIDIUM; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; MULTILAYERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SWITCHING CIRCUITS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 77649188414     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.12.022     Document Type: Article

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