Optically transparent ZnO-based n-i-p ultraviolet photodetectors

Thin Solid Films

Volumn 515, Issue 17, 2007, Pages 6981-6985

  Wang, Kai ^a   Vygranenko, Yuriy ^a   Nathan, Arokia ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Ion beam assisted e beam evaporation; n i p heterostructure photodiode; Transparent UV photodetector; Zinc oxide

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EVAPORATION; ION BEAM ASSISTED DEPOSITION; LEAKAGE CURRENTS; PHOTODIODES; TRANSPARENCY; ULTRAVIOLET DETECTORS;

ION BEAM ASSISTED E-BEAM EVAPORATION; LOW BIASES; N-I-P HETEROSTRUCTURE PHOTODIODE; THERMAL GENERATION; TRANSPARENT UV PHOTODETECTORS;

ZINC OXIDE;

EID: 34247578612     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.009     Document Type: Article

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