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Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

(7) Li, Dabing a Sun, Xiaojuan a Song, Hang a Li, Zhiming a Chen, Yiren a Miao, Guoqing a Jiang, Hong a

a CHANGCHUN INSTITUTE OF OPTICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; EDGE DISLOCATION; EDGE DISLOCATION DENSITY; METAL SEMICONDUCTOR METAL; PHOTOELECTRIC PROPERTY; PHOTOGENERATED ELECTRONS; RESPONSIVITY; SCHOTTKY BARRIER HEIGHTS; THREADING DISLOCATION; ULTRA-VIOLET PHOTODETECTORS;

DANGLING BONDS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SCREW DISLOCATIONS; SCREWS; STRESS INTENSITY FACTORS;

EDGE DISLOCATIONS;

EID: 78651264651 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3536480 Document Type: Article

Times cited : (89)

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