Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs

13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013

Volumn , Issue , 2013, Pages 29-30

  Wanyan, Jingjing ^a   Sun, Zhaoqi ^a   Shi, Shiwei ^a   Wu, Mingzai ^a   He, Gang ^a   Li, Guang ^a  

^a ANHUI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-ILLUMINATED; CUTOFF WAVELENGTHS; DRIFTDIFFUSION EQUATIONS; ELECTRICAL FIELD; PEAK RESPONSIVITY; PHOTORESPONSES; SEPARATE ABSORPTION AND MULTIPLICATION; SPECTRAL RESPONSE CHARACTERISTICS;

COMPUTER SIMULATION; GALLIUM NITRIDE; NUMERICAL MODELS;

OPTOELECTRONIC DEVICES;

EID: 84890545076     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUSOD.2013.6633108     Document Type: Conference Paper

References (10)

1. M. Liu, X. Bai, C. Hu, X. Guo, J. C. Campbell, Z. Pan, M. M. Tashima, "Low dark count rate and high single-photon detection efficiency avalanche photodiode in Geiger-mode operation," IEEE Phot. Tech. Lett., 19, 378-80 (2007).
2. X. D. Wang, W. D. Hu, X. S. Chen, J. T. Xu, X. Y. Li, W. Lu, "Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector", Optical and Quantum Electronics, 42, Page 755-764 (2011).
3. W. Hu, X. Chen, Z. Quan, C. Xia, W. Lu, "Demonstration and dynamic analysis of trapping of hot electron at gate edges model for current collapse and gate lag in GaN-based high-electron-mobility-transistor including selfheating effect", Applied Physics Letters, 89, 243501 (2006).
4. R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi, "Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes," Appl. Phys. Lett., 90, 141112 (2007).
5. I. J. Oguzman, E. Bellotti, K. Brennan, J. Kolnik, R. Wang, and P. Ruden, "Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN", J. Appl. Phys., 81, 7827 (1997).
6. X. Guo, L. B. Rowland, G. T. Dunne, J. A. Fronheiser, P. M. Sandvik, A.L. Beck, and J. C. Campbell, "Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes", IEEE Photonics Technol. Lett., 18, 136 (2006).
7. Hu W D, Chen X S, Quan Z J, Xia C S, Lu W and Yuan H J, Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect, Appl. Phys. Lett., 89, 243501 (2006).
8. X. Wang, W. Hu, X. Chen, J. Xu, L. Wang, X. Li, and W. Lu, Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes, Journal of Physics D: Applied Physics, 44, 405102 (2011).
9. J. L. Pau, C. Bayram, R. McClintock, M. Razeghi, and D. Silversmith, "Back-illuminated separate absorption and multiplication GaN avalanche Photodiodes", Appl. Phys. Lett., 92, 101120 (2008).
10. Ryan McClintock, Erdem Cicek, Zahra Vashaei, Can Bayram, Manijeh Razeghi,nd Melville P. Ulmer, "III-Nitride Based Avalanche Photo Detectors", Proc. of SPIE, 7780 77801B-23501, 2012.