Wide-bandgap semiconductor ultraviolet photodetectors

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages

  Monroy, E ^a   Omnes F ^b   Calle, F ^c  

^a CEA GRENOBLE   (France)

^b CNRS   (France)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HIGH TEMPERATURE OPERATIONS; NITRIDES; PHOTODIODES; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTOR PHOTODETECTOR; SEMICONDUCTOR ULTRAVIOLET PHOTODETECTOR; SILICON PHOTODIODE; ZINC SELENIDE;

ULTRAVIOLET DETECTORS;

EID: 0037397570     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/201     Document Type: Review

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