Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector

Proceedings - Winter Simulation Conference

Volumn , Issue , 2013, Pages 417-420

  Kung, C Y ^a   Young, S L ^b   Kao, M C ^b   Chen, H Z ^b   Lin, J H ^b   Lin, H H ^b   Horng, Lance ^c   Shih, Y T ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

nanorod and UV photodetector; seed layer; ZnO

Indexed keywords

CURRENT RATIOS; DIFFERENT THICKNESS; DIFFRACTION PEAKS; HEXAGONAL STRUCTURES; HYDROTHERMALLY SYNTHESIZED; IV CHARACTERISTICS; LI DOPING; LI-DOPED ZNO; LOW TEMPERATURES; P-TYPE; SEED LAYER; SEMICONDUCTOR NANORODS; THICKNESS EFFECT; UV ILLUMINATIONS; UV PHOTODETECTORS; WURTZITES; ZNO; ZNO SEED LAYERS;

ELECTRIC PROPERTIES; LITHIUM; NANOELECTRONICS; NANORODS; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR DOPING; SILICON; X RAY DIFFRACTION; ZINC; ZINC SULFIDE;

ZINC OXIDE;

EID: 84874784393     PISSN: 08917736     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2013.6466065     Document Type: Conference Paper

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