Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates

Journal of Semiconductors

Volumn 32, Issue 7, 2011, Pages

  Su, Shichen ^a,b   Yang, Xiaodong ^a   Hu, Candong ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

detector; MBE; ZnO

Indexed keywords

APPLIED BIAS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; NANOWALL NETWORKS; PEAK RESPONSIVITY; PLANAR GEOMETRIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PREFERRED ORIENTATIONS; REJECTION RATIOS; RESPONSE SPECTRA; SI SUBSTRATES; SI(111) SUBSTRATE; ULTRA-VIOLET PHOTODETECTORS; ZNO;

GEOMETRY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960688250     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/7/074008     Document Type: Article

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