Effects of oxide layers and metals on photoelectric and optical properties of Schottky barrier photodetector

Renewable Energy

Volumn 31, Issue 10, 2006, Pages 1493-1503

  Mohamad, W F ^a   Abou Hajar, A ^b   Saleh, A N ^c  

^a ISRA UNIVERSITY   (Jordan)

^b UNIVERSITY OF ALEPPO   (Syrian Arab Republic)

^c UNIVERSITY OF MOSUL   (Iraq)

Author keywords

MOS structures; Photoelectric properties of MOS; Schottky barrier photodetector

Indexed keywords

DEPOSITION; MOS DEVICES; PHOTODETECTORS; QUANTUM THEORY; SILICON; SUBSTRATES;

MOS STRUCTURES; PHOTOELECTRIC PROPERTIES OF MOS; SCHOTTKY BARRIER PHOTODETECTOR;

SCHOTTKY BARRIER DIODES;

DEPOSITION; MOS DEVICES; PHOTODETECTORS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SILICON; SUBSTRATES;

NONMETAL; OPTICAL PROPERTY; OXIDE;

EID: 33745910217     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2005.12.012     Document Type: Article

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