High-responsivity AlGaN-GaN multi-quantum well UV photodetector

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 27, Issue 2, 2014, Pages 309-317

  Rostami, Ali ^a   Ravanbaksh, Neda ^b   Golmohammadi, Saeed ^a   Abedi, Kambiz ^c  

^a UNIVERSITY OF TABRIZ   (Iran)

^b ISLAMIC AZAD UNIVERSITY   (Iran)

^c SHAHID BEHESHTI UNIVERSITY   (Iran)

Author keywords

Multi quantum well; Responsivity; UV photodetector

Indexed keywords

GALLIUM NITRIDE; PHOTODETECTORS; PHOTONS; STRUCTURAL OPTIMIZATION;

BARRIER THICKNESS; GAN-QUANTUM WELLS; INVESTIGATE EFFECTS; MULTIQUANTUM WELLS; OPTIMAL STRUCTURES; PEAK RESPONSIVITY; RESPONSIVITY; UV PHOTODETECTORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84900497260     PISSN: 08943370     EISSN: 10991204     Source Type: Journal    
DOI: 10.1002/jnm.1933     Document Type: Article

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