Effect of AIN film thickness on photo/dark currents of MSM UV photodetector

Microwave and Optical Technology Letters

Volumn 50, Issue 11, 2008, Pages 2863-2866

  Yang, Ru Yuan ^a   Hsiung, Chin Min ^a   Chen, Hsuan Hsu ^a   Wu, Hung Wei ^b   Shin, Ming Chang ^c  

^a NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

AlN; MSM; Photodetector; Thin film; UV

Indexed keywords

ALUMINA; MARKOV PROCESSES; OPTOELECTRONIC DEVICES; SILICON; SPUTTER DEPOSITION;

ALN; MSM; PHOTODETECTOR; THIN FILM; UV;

PHOTODETECTORS;

EID: 53349146191     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.23796     Document Type: Article

References (6)

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