Aluminum gallium nitride/silicon carbide separate absorption and multiplication avalanche photodiodes

2012 Lester Eastman Conference on High Performance Devices, LEC 2012

Volumn , Issue , 2012, Pages

  Rodak, L E ^a   Sampath, A V ^a   Gallinat, C S ^a   Enck, R W ^a   Smith, J ^a   Shen, H ^a   Wraback, M ^a   Chen, Y ^b   Zhou, Q ^b   Campbell, J C ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b University of Virginia   (United States)

Author keywords

aluminum gallium nitride; avalanche photodiode; silicon carbide; ultra violet

Indexed keywords

ALGAN; ALN LAYERS; DEEP ULTRAVIOLET; DEVICE OPERATIONS; DEVICE PERFORMANCE; HETERO INTERFACES; HIGH GAIN; INTERFACE CHARGE; INTERFACE CONTROL LAYER; PIEZOELECTRIC POLARIZATIONS; SEPARATE ABSORPTION AND MULTIPLICATION; ULTRA-VIOLET;

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; HETEROJUNCTIONS; NITRIDES; SEPARATION; SILICON CARBIDE;

AVALANCHE PHOTODIODES;

EID: 84874092941     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/lec.2012.6410993     Document Type: Conference Paper

References (7)

1. E. Munoz, E. Monroy, J.L. Pau, F. Calle, F. Mones, and P. Gibart, "III nitrides and UV detection," J. Phys.: Condens. Matter, vol. 13, pp. 7115-7137, 2001.
2. X. Bai, Y. Guo, D. Mcintosh, H. D. Liu, and J. C. Campbell, "High detection sensitivity of ultraviolet 4H-SiC avalanche photodiodes," IEEE J. Quantum Electron., vol. 43, pp. 1159-1162, 2007.
3. H. Liu, D. Mcintosh, X. Bai, H. Pan, Mingguo Liu, J. C. Campbell, and H. Y. Cha, "4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency", IEEE Photon. Technol. Lett., vol. 20, pp. 1551-1553 (2008).
4. H. Y. Cha and P. M. Sandvik, "Electrical and optical modeling of 4H-SiC avalanche photodiodes," Jpn. J. Appl. Phys, vol. 47, pp 5423-5425, 2008.
5. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys., vol. 94, pp. 3675-96, 2003.
6. S. Bai, R. P. Devaty, W. J. Choyke, U. Kaiser, G. Wagner, and M. F. MacMillan, "Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix," Appl. Phys. Lett., vol. 83, pp. 3171-3173, 2003.
7. A.V. Sampath, Q. G. Zhou, R. W. Enck, D. McIntosh, H. Shen, J. C. Campbell, and M. Wraback, "p-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes", Appl. Phys. Lett., vol. 101, pp. 093506, 2012.