Analysis of the properties of germanium/zinc silicate film growth through a simple thermal evaporation technique for hydrogen gas sensing and deep UV photodetector application

Materials Science in Semiconductor Processing

Volumn 16, Issue 5, 2013, Pages 1360-1364

  Jumidali, Mohd Muzafa ^a,b   Hashim, M R ^a   Al Heuseen, K ^c  

^a SCHOOL OF PHYSICS   (Malaysia)

^b UNIVERSITI TEKNOLOGI MARA   (Malaysia)

^c AL BALQA APPLIED UNIVERSITY   (Jordan)

Author keywords

Deep UV photodetector; Hydrogen gas sensor; Metal semiconductor metal (MSM); Thermal evaporation method

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY DISPERSIVE SPECTROSCOPY; EVAPORATION; FILM GROWTH; GAS DETECTORS; GASES; GERMANIUM; METALS; NICKEL; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICATES; THERMAL EVAPORATION; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

DEEP UV; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HORIZONTAL TUBE FURNACES; HYDROGEN GAS SENSORS; METAL SEMICONDUCTOR METAL; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL EVAPORATION METHOD; THERMAL EVAPORATION TECHNIQUE;

THIN FILMS;

EID: 84885386555     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.12.004     Document Type: Article

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