Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO /insulator- MgOp-Si

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Zhang, T C ^a   Guo, Y ^a   Mei, Z X ^a   Gu, C Z ^a   Du, X L ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC RECTIFIERS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

BARRIER LAYERS; CUT OFFS; DETECTIVITY; DOUBLE HETEROJUNCTIONS; PHOTORESPONSE SPECTRUMS; RECTIFICATION RATIOS; REJECTION RATIOS; REVERSE BIAS; ULTRA VIOLETS; ULTRA-VIOLET PHOTODETECTORS; ZNO;

INSULATION;

EID: 63049135481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103272     Document Type: Article

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