SCOPUS 정보 검색 플랫폼

Volumn 70, Issue 17, 1997, Pages 2277-2279

Schottky barrier detectors on GaN for visible-blind ultraviolet detection

(9) Chen, Q a Yang, J W a Osinsky, A a Gangopadhyay, S a Lim, B a Anwar, M Z a Asif Khan, M a Kuksenkov, D b Temkin, H b

a APA Optronics (United States)

b Department of Electrical and Computer Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; EPITAXIAL GROWTH; FOURIER TRANSFORMS; FREQUENCY DOMAIN ANALYSIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

GALLIUM NITRIDE; NOISE EQUIVALENT POWER; SCHOTTKY BARRIER DETECTORS;

ULTRAVIOLET DETECTORS;

EID: 0031120768 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118837 Document Type: Article

Times cited : (329)

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