Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3198-3200

  Monroy, E ^a,b   Palacios, T ^b   Hainaut, O ^c   Omnes F ^d   Calle, F ^b   Hochedez, J F ^e  

^a CEA GRENOBLE   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c UNIVERSITÉ PARIS SUD   (France)

^d CNRS   (France)

^e ROYAL OBSERVATORY OF BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GAN METAL-SEMICONDUCTOR-METAL; HIGH ENERGY; PHOTO DETECTION; RESIDUAL DOPING; VACUUM ULTRAVIOLETS;

GALLIUM NITRIDE; HIGH ENERGY PHYSICS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR DOPING;

METALS;

EID: 79956044260     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1475362     Document Type: Article

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