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Volumn 254, Issue 19, 2008, Pages 6268-6272
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Metal-diamond semiconductor interface and photodiode application
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Author keywords
Diamond; Metal interface; Photodiode; Ultraviolet
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Indexed keywords
ANNEALING;
BORON;
BORON CARBIDE;
CARRIER CONCENTRATION;
CHROMIUM COMPOUNDS;
CURRENT VOLTAGE CHARACTERISTICS;
DIAMONDS;
HAFNIUM COMPOUNDS;
METALS;
MOLYBDENUM COMPOUNDS;
NITRIDES;
PHOTODIODES;
SCHOTTKY BARRIER DIODES;
THERMODYNAMIC STABILITY;
TUNGSTEN CARBIDE;
BORON-DOPED POLYCRYSTALLINE DIAMOND;
CARRIER TRANSPORT MECHANISMS;
DEEP-ULTRAVIOLET PHOTODIODES;
METAL INTERFACE;
SCHOTTKY BARRIER HEIGHTS;
SPECIFIC CONTACT RESISTANCES;
TRANSMISSION LINE METHODS;
ULTRAVIOLET;
METAL ANALYSIS;
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EID: 45049083255
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.02.157 Document Type: Article |
Times cited : (18)
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References (19)
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