GaN UV MSM photodetector on porous β-SiC/(1 1 1)Si substrates

Sensors and Actuators, A: Physical

Volumn 147, Issue 1, 2008, Pages 1-5

  Chang, Shiuan Ho ^a   Fang, Yean Kuen ^b   Hsu, Kai Chun ^b   Wei, Tzu Chieh ^b  

^a DIWAN COLLEGE OF MANAGEMENT   (Taiwan)

^b Institute of Microelectronics   (Taiwan)

Author keywords

SiC; GaN; MSM; Porous

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GALLIUM NITRIDE; LEAKAGE CURRENTS; MARKOV PROCESSES; METALS; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SOLIDS; SUBSTRATES; THICK FILMS; THIN FILMS;

CURRENT RATIOS; ELECTROCHEMICAL ANODIZATION; GAN FILMS; GAN THIN FILMS; HIGH QUALITY (HQ); LOW LEAKAGE CURRENT; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; MSM PHOTODETECTORS; SI(2 1 1) SUBSTRATES; SIC THIN FILMS;

GALLIUM ALLOYS;

EID: 47849086553     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.03.013     Document Type: Article

References (12)

1. Razeghi M., and Rogalski A. Semiconductor ultraviolet detectors. J. Appl. Phys. 79 10 (1996) 7433-7473
2. Pearton S.J., Zolper J.C., Shul R.J., and Ren F. GaN: processing, defects and devices. J. Appl. Phys. 86 1 (1999) 1-78
3. Armitage R., Yang Q., Feick H., Gebauer J., Weber E.R., Shinkai S., and Sasaki K. Lattice-matched HfN buffer layers for epitaxy of GaN on Si. Appl. Phys. Lett. 81 8 (2002) 1450-1452
4. Seon M., Prokofyeva T., Holtz M., Nikishin S.A., Faleev N.N., and Temkin H. Selective growth of high quality GaN on Si(1 1 1) substrates. Appl. Phys. Lett. 76 14 (2000) 1842-1844
5. Wang D., Hiroyama Y., Tamura M., Ichikawa M., and Yoshida S. Growth of hexagonal GaN on Si(1 1 1) coated with a thin flat SiC buffer layer. Appl. Phys. Lett. 77 12 (2000) 1846
6. Wu J., Yaguchi H., Nagasawa H., Yamaguchi Y., Onabe K., Shiraki Y., and Ito R. Investigation of luminescence properties of GaN single crystals grown on 3C-SiC substrates. J. Crys. Grow. 189/190 (1998) 420-424
7. Park C.I., Kang J.H., Kim K.C., Nahm K.S., Suh E.-K., and Lim K.Y. Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(1 1 1) substrate using various buffer layers. Thin Solid Films 401 (2001) 60-66
8. Chaudhry M.I. Electrical transport properties of crystalline silicon carbide/silicon heterojunctions. IEEE Electron Device Lett. 12 (1991) 670-672
9. Akira Takazawa, Tetsuro Tamura and Masao Yamada, Porous β-SiC fabrication by electrochemical anodization, Jpn. J. Appl. Phys., Vol. 32, pp. 3148-3149, Part 1, No. 7, July, 1993.
10. Inoki C.K., Kuan T.S., Sagar A., Lee C.D., Feenstra R.M., Koleske D.D., Diaz D.J., Bohn P.W., and Adesida I. Growth of GaN on porous SiC and GaN substrates. Physica Status Solidi (a) 200 1 (2003) 44-47
11. Sagar A., Lee C.D., Feenstra R.M., Inoki C.K., and Kuan T.S. Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity. J. Vacu. Sci. & Tech. B: Microelectronics and Nanometer Structures 21 (2003) 1812-1817
12. Chuang R.W., Chang S.P., Chang S.J., Chiou Y.Z., Lu C.Y., Lin T.K., Lin Y.C., Kuo C.F., and Chang H.M. Gallium Nitride metal-semiconductor-metal photodetectors prepared on silicon substrates. J. Appl. Phys. 102 (2007) 073110