Visible blind p-i-n ultraviolet photodetector fabricated on 4H-SiC

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 104-106

  Chen, Xiaping ^a   Yang, Weifeng ^a   Wu, Zhengyun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

4H SiC; I V characteristics; Responsivity; UV photodetector

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PHOTOCURRENTS; PHOTODETECTORS; PHOTONS;

4H-SIC; RESPONSIVITY; UV PHOTODETECTOR;

ULTRAVIOLET DETECTORS;

EID: 30344469032     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.034     Document Type: Conference Paper

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