Effect of thermal treatment on the performance of ZnO based metal-insulator-semiconductor ultraviolet photodetectors

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Ali, Ghusoon M ^a   Chakrabarti, P ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; COMBINED EFFECT; INTERFACIAL REACTIONS; METAL-INSULATOR-SEMICONDUCTORS; OPTICAL CHARACTERISTICS; P-TYPE SI; PHOTORESPONSES; SCHOTTKY BARRIERS; SOL-GEL TECHNIQUE; THERMAL TREATMENT; ULTRA-VIOLET PHOTODETECTORS; ZNO; ZNO THIN FILM;

ANNEALING; ELECTRIC PROPERTIES; GELS; METAL INSULATOR BOUNDARIES; METAL TESTING; MIS DEVICES; OPTOELECTRONIC DEVICES; PHASE TRANSITIONS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; ZINC OXIDE;

METAL ANALYSIS;

EID: 77956208895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467204     Document Type: Article

References (20)

1. E. Monroy, F. Omǹs, and F. Calle, Semicond. Sci. Technol. SSTEET 0268-1242 18, R33 (2003). 10.1088/0268-1242/18/4/201
2. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. J. Cho, and H. Morko̧, J. Appl. Phys. JAPIAU 0021-8979 98, 041301 2005. 10.1063/1.1992666
3. B. Angadi, H. C. Park, H. W. Choi, J. W. Choi, and W. K. Choi, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 40, 1422 (2007). 10.1088/0022-3727/40/5/016
4. P. Sharma, K. Sreenivas, and K. V. Rao, J. Appl. Phys. JAPIAU 0021-8979 93, 3963 (2003). 10.1063/1.1558994
5. X. Li, Q. Li, D. Liang, and Y. Xu, Opt. Lett. OPLEDP 0146-9592 5, 216 (2009). 10.1007/s11801-009-8216-6
6. D. Jiang, J. Zhang, Y. Lu, K. Liu, D. Zhao, Z. Zhang, D. Shen, and X. Fan, Solid-State Electron. SSELA5 0038-1101 52, 679 (2008). 10.1016/j.sse.2007. 10.040
7. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, J. Cryst. Growth JCRGAE 0022-0248 225, 110 (2001). 10.1016/S0022-0248(01)00830-2
8. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, J. Cryst. Growth JCRGAE 0022-0248 281, 513 (2005). 10.1016/j.jcrysgro.2005.04.056
9. K. J. Chen, F. Y. Hung, S. J. Chang, and S. J. Young, J. Alloys Compd. JALCEU 0925-8388 479, 674 2009. 10.1016/j.jallcom.2009.01.026
10. S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, Sens. Actuators, A SAAPEB 0924-4247 141, 225 (2008). 10.1016/j.sna.2007.06.003
11. M. H. Habibi and M. Khaledi Sardashti, J. Iran. Chem. Soc. 5, 603 (2008). 1735-207X
12. M. N. Kamalasanan and S. Chandra, Thin Solid Films THSFAP 0040-6090 288, 112 (1996). 10.1016/S0040-6090(96)08864-5
13. B. L. Zhu, X. H. Sun, X. Z. Zhao, F. H. Su, G. H. Li, X. G. Wu, J. Wu, R. Wu, and J. Liu, Vacuum VACUAV 0042-207X 82, 495 (2008). 10.1016/j.vacuum.2007. 07.059
14. K. Ogata, T. Komuro, K. Hama, K. Koike, S. Sasa, M. Inoue, and M. Yano, Appl. Surf. Sci. ASUSEE 0169-4332 237, 348 (2004). 10.1016/j.apsusc.2004.06.095
15. X. Q. Wei, B. Y. Man, M. Liu, C. S. Xue, H. Z. Zhuang, and C. Yang, Physica B PHYBE3 0921-4526 388, 145 (2007). 10.1016/j.physb.2006.05.346
16. A. Nayak and H. D. Banerjee, Appl. Surf. Sci. ASUSEE 0169-4332 148, 205 (1999). 10.1016/S0169-4332(99)00144-0
17. G. M. Ali, S. Singh, and P. Chakrabarti, J. Nanoelectrons and Optoelectrons 4, 1 (2009). 10.1166/jno.2009.1001
18. W. L. Masterton, E. J. Slowinski, and C. L. Stanitski, Chemical Principles (CBS College Publishing, San Francisco, 1983).
19. D. D. Wagman, W. H. Evans, V. B. Parker, R. H. Schumm, I. Halow, S. M. Bailey, K. L. Churney, and R. L. Nuttall, J. Phys. Chem. Ref. Data JPCRBU 0047-2689 11, Suppl. 2 (1982).
20. Y. Lv and L. Wan, " Recent Progress of Ohmic Contact on ZnO.," Proceedings of the 2008 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPTHDP 2008), Shanghai, China, 2008, pp. 1-4.