Influence of defects in n- -GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Zhao, D G ^a   Jiang, D S ^a   Zhu, J J ^a   Liu, Z S ^a   Zhang, S M ^a   Liang, J W ^a   Yang, Hui ^a   Li, X ^b   Li, X Y ^b   Gong, H M ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SURFACE PROPERTIES;

RESPONSIVITY; ULTRAVIOLET PHOTODETECTORS; VACANCY CONCENTRATION;

GALLIUM NITRIDE;

EID: 33846967763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2450658     Document Type: Article

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