Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

  Malinowski, Pawel E ^a,b   Duboz, Jean Yves ^c   De Moor, Piet ^a   Minoglou, Kyriaki ^a   John, Joachim ^a   Horcajo, Sara Martin ^a   Semond, Fabrice ^c   Frayssinet, Eric ^c   Verhoeve, Peter ^d   Esposito, Marco ^d,e   Giordanengo, Boris ^f   Benmoussa, Ali ^f   Mertens, Robert ^a,b   Van Hoof, Chris ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c CRHEA CNRS   (France)

^d EUROPEAN SPACE AGENCY   (Netherlands)

^e Cosine ^*  (Netherlands)

^f ROYAL OBSERVATORY OF BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALGAN; ALGAN LAYERS; CURRENT MECHANISMS; CUTOFF WAVELENGTHS; ELECTRODE DESIGN; EMISSION LINES; EUV SOURCE; EXTREME ULTRAVIOLET; EXTREME ULTRAVIOLETS; HELIUM DISCHARGE; IMAGERS; INVERTED STRUCTURE; LAYER STACKS; N-DOPED; REJECTION RATIOS; SCHOTTKY DIODES; SCHOTTKY PHOTODIODES; SCHOTTKY STRUCTURES; THREE ORDERS OF MAGNITUDE;

ALUMINUM GALLIUM NITRIDE; EXTREME ULTRAVIOLET LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HELIUM; LIGHT SOURCES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79954533031     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3576914     Document Type: Article

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