Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors

Journal of Crystal Growth

Volumn 381, Issue , 2013, Pages 6-9

  Liang, H L ^a   Mei, Z X ^a   Hou, Y N ^a   Liang, S ^a   Liu, Z L ^a   Liu, Y P ^a   Li, J Q ^a   Du, X L ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A3. MBE; B3. Photodetector; BeO; UV B; W MgZnO

Indexed keywords

BEO; DEEP ULTRAVIOLET; INSULATING LAYERS; PHOTORESPONSES; REFLECTANCE SPECTRUM; SITU REFLECTION; UV-B; W-MGZNO;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL BAND GAPS; PHOTODETECTORS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

PHOTONS;

EID: 84880441799     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.07.001     Document Type: Article

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