Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect

ACS Nano

Volumn 4, Issue 10, 2010, Pages 6285-6291

  Yang, Qing ^a,b   Guo, Xin ^b   Wang, Wenhui ^a   Zhang, Yan ^a   Xu, Sheng ^a   Lien, Der Hsien ^a   Wang, Zhong Lin ^a  

^a Georgia Institute of Technology   (United States)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

photodetector; piezo phototronic effect; piezopotential; Schottky contact; ZnO nanowire

Indexed keywords

COMPRESSIVE STRAIN; DETECTION SENSITIVITY; EXCITATION LIGHT; IN-DEPTH UNDERSTANDING; LIGHT DETECTION; METAL SEMICONDUCTOR METAL; PHYSICAL MECHANISM; PIEZO-ELECTRIC EFFECTS; PIEZO-PHOTOTRONIC EFFECT; PIEZOPOTENTIAL; RESPONSIVITY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SEMI-CONDUCTING PROPERTY; SYSTEMATIC STUDY; UV-LIGHT ILLUMINATION; ZNO; ZNO NANOWIRES;

NANOWIRES; PHOTODETECTORS; PIEZOELECTRICITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; WIRE; ZINC OXIDE;

OPTOELECTRONIC DEVICES;

BIOMATERIAL; METAL; METAL NANOPARTICLE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; LIGHT; METHODOLOGY; NANOTECHNOLOGY; PHYSICS; SEMICONDUCTOR; STATISTICAL MODEL;

BIOCOMPATIBLE MATERIALS; ELECTROCHEMISTRY; LIGHT; METAL NANOPARTICLES; METALS; MODELS, STATISTICAL; NANOTECHNOLOGY; PHYSICS; SEMICONDUCTORS; ZINC OXIDE;

EID: 78049352603     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1022878     Document Type: Article

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