A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications

Sensors and Actuators, A: Physical

Volumn 147, Issue 1, 2008, Pages 60-63

  Chou, Tse Heng ^a   Fang, Yean Kuen ^a   Chiang, Yen Ting ^a   Lin, Cheng I ^a   Yang, Che Yun ^a  

^a Institute of Microelectronics   (Taiwan)

Author keywords

Detector; Homojunction; RTCVD; SiCN; UV

Indexed keywords

EPITAXIAL GROWTH; SILICON; SILICON CARBIDE;

CURRENT RATIOS; ELEVATED TEMPERATURES; HIGH GAIN; HIGH TEMPERATURE (HT); HOMO JUNCTIONS; LOW COSTS; ROOM-TEMPERATURE (RT); SI(2 1 1) SUBSTRATES; ULTRAVIOLET (UV); ULTRAVIOLET (UV) LIGHT; UV DETECTORS;

HIGH TEMPERATURE APPLICATIONS;

EID: 47649128856     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.03.004     Document Type: Article

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