The improvements of GaN p-i-n UV sensor on 1°off-axis sapphire substrate

Materials Science and Engineering: B

Volumn 121, Issue 1-2, 2005, Pages 86-91

  Liu, Su Sir ^a   Li, Pei Wen ^a   Lan, W H ^b   Lin, Wen Jen ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

AFM; GaN; Off axis; Responsivity; UV sensor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; EPITAXIAL GROWTH; ETCHING; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; SAPPHIRE; SENSORS; ULTRAVIOLET DEVICES;

AFM; OFF-AXIS; REPONSIVITY; UV SENSORS;

GALLIUM NITRIDE;

EID: 19144367373     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.03.014     Document Type: Article

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