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Volumn 49, Issue 8, 2005, Pages 1347-1351
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Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
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Author keywords
GaN; InGaN; LED; MOCVD; MQW; OEIC; Photodetector; Photodiode
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Indexed keywords
ELECTRIC BREAKDOWN;
GALLIUM NITRIDE;
INTEGRATED OPTOELECTRONICS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTODETECTORS;
PHOTODIODES;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
DARK-CURRENT DENSITIES;
GAN;
INGAN;
LARGE-SIZE DEVICES;
MQW;
LIGHT EMITTING DIODES;
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EID: 24144468949
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2005.06.002 Document Type: Article |
Times cited : (37)
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References (13)
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