메뉴 건너뛰기




Volumn 49, Issue 8, 2005, Pages 1347-1351

Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures

Author keywords

GaN; InGaN; LED; MOCVD; MQW; OEIC; Photodetector; Photodiode

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 24144468949     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.002     Document Type: Article
Times cited : (37)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.